Modeling of hot-carrier degradation based on thorough carrier transport treatment

Modeling of Hot-carrier Degradation Based on Thorough Carrier Transport Treatment

We present and validate a physics-based model for hot-carrier degradation. The model is based on a thorough carrier transport treatment by means of an exact solution of the Boltzmann transport equation. Such important ingredients relevant for hot-carrier degradation as the competing mechanisms of bond dissociation, electron-electron scattering, the activation energy reduction due to the interac...

Physics-Based Modeling of Hot-Carrier Degradation

We present and verify a physics-based model of hot-carrier degradation (HCD). This model is based on a thorough solution of the Boltzmann transport equation. Such a solution can be achieved using either a stochastic solver based on the Monte Carlo approach or a deterministic counterpart that is based on representation of the carrier energy distribution function as a series of spherical harmonic...

Comprehensive Physical Modeling of Nmosfet Hot-carrier-induced Degradation

The role of hot-carrier-induced interface states in NMOSFETs is discussed. A new model is proposed based on measurements in several 0.7/~m CMOS technologies of different suppliers. Our model for the first time enables accurate interface state prediction over many orders of magnitude in time for all stress conditions under pinch-off and incorporates saturation. It can easily be implemented in a ...

On the limits of applicability of drift-diffusion based hot carrier degradation modeling

A Numerical Simulation of Hot-carrier Induced Device Degradation

For radical designs the hot-carrier reliability is an important issue. This creates the need for the numerical simulation of hot-carrier induced degradation. From a design point of view, the goal of the degradation simulation will be the hot-carrier aging simulation for the prediction of device lifetime. This simulation requires a complicated set of physical models, which includes the hot-carri...